近贴聚焦成像器件管体熔铟层气孔产生的因素分析

Analysis for Porosity in Pour Indium Layer of Proximity Focusing Image Device Tube Body

为解决成像器件管体熔铟层产生流散不均匀、熔层断裂、体内气泡造成的光电阴极与管体封接漏气问题,深入分析了产生根源,研究了一种管体注铟技术,使管体注铟合格率达到了100%,光电阴极与管体封接气密性成品率达到了98%。

This paper intend to solve the problems of pour indium layer of tube body for proximity focusing image device which include uniform dispersion of indium,weld layer fracture,air-leaking between optoelectronic cathode and tube body sealing.We deeply analyze the causes and research the technology of tube body pouring indium which enhance the qualified rate of tube body pouring indium to 100% and qualified rate of air tightness between optoelectronic cathode and tube body sealing to 98%.