透明导电薄膜ZnO∶Mn的低温制备及性能研究

Low Temperature Growth and Properties of Transparent Conducting ZnO∶Mn Films

利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锰氧化锌(ZnO∶Mn)透明导电薄膜。实验制备的ZnO∶Mn为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO∶Mn薄膜的生长速率、残余应力及电学性能有很大影响,而对薄膜的晶粒尺寸和光学性能影响不大。考虑薄膜的电学、光学及力学性能,认为靶与衬底之间的最佳距离为7.0 cm。在此条件下制备的ZnO∶Mn薄膜的电阻率达到4.2×10-4Ω.cm,可见光透过率为86.6%,而残余应力仅为-0.025 GPa。

The transparent conducting Mn-doped zinc oxide（ZnO∶Mn） films were deposited by direct current magnetron sputtering on glass substrates at a fairly low temperature.The impacts of the growth conditions,including the pressure,substrate temperature,sputtering power,and target/substrate separation,on its microstructures and its properties were evaluated.The results show that the target/substrate distance strongly affects the deposition rate,stress and electric properties.At an optimized target/substrate separation of 7.0 cm,the ZnO∶Mn film has a resistivity of 4.2×10-4 Ω·cm,a transmittance about 86.6%,and a residue compress stress of 0.025 GPa.Possible mechanisms were also tentatively discussed.