摘要
A new circuit model for designing and manufacturing an S-band low noise amplifier(LNA) with the software,Advanced Design System(ADS),is introduced in this paper.The proposed model involves shunted impedance at the grid to achieve a stable LNA without measuring the S-parameters of transistors at low temperatures.The LNA was measured over the operation band of 2.2-2.3 GHz,which has input and output standing wave ratios below 1.2.The noise figure of the manufactured LNA was about 0.2 dB and the gain was above 22 dB,which indicated that our LNA worked well at 77 K.
A new circuit model for designing and manufacturing an S-band low noise amplifier （LNA） with the software, Advanced Design System （ADS）, is introduced in this paper. The proposed model involves shunted impedance at the grid to achieve a stable LNA without measuring the S-parameters of transistors at low temperatures. The LNA was measured over the operation band of 2.2-2.3 GHz, which has input and output standing wave ratios below 1.2. The noise figure of the manufactured LNA was about 0.2 dB and the gain was above 22 dB, which indicated that our LNA worked well at 77 K.
基金
supported by the Specialized Research Fund for Doctoral Program of Higher Education in China(200800551009)
the National High Technology Research and Development Program of China(2009AA03Z208)
