SIS伏安特性测量仪的仿真设计与实现

Simulation Design and Realization for Measurement Circuit of Volt-ampere Charater Based on SIS

利用MULTISIM10在电路设计中良好的仿真特性,针对超导SIS隧道结器件伏安特性测试电路的设计,进行了仿真和参数修正。根据仿真和修正结果,设计和制备了超导SIS器件伏安特性测试电路,利用该设备对SIS结进行实测并与理论比较,取得了良好效果。实现了高稳定度、高精度、低噪声的电路设计,验证了MULTISIM10对电路仿真与实践效果的一致性。

With good characteristics of MULTISIMIO simulation in the circuit design, it is simulated and modificated with DC bias circuit for superconducting tunnel junction devices （SIS）. According to the resuhs of simulation and correction, the circuit is fabricated and superconducting SIS junction are measured by this bias source, the excellent properties with a high stability, high accuracy and low-noise are realized. The consistency is verified between simulation and practice effects .