摘要
采用等离子体辅助化学气相沉积(PECVD)技术,在Corning Eg 2000玻璃上制备非晶硅薄膜,研究了射频功率对薄膜光电性能的影响。结果表明:通过调节功率可获得具有高折射率,高吸收系数,低暗电导率的非晶硅薄膜。
Amorphous silicon thin film was fabricated by plasma enhanced chemical vapor deposition on the Coming Eg 2000 glass.The effects of RF power on the photoelectric properties of the film were studied.h is indicated that amorphous silicon thin film with high refractive index, high absorption coefficient and low dark conductivity can be obtained by adjusting the RF power.
出处
《真空》
CAS
北大核心
2011年第6期29-31,共3页
Vacuum
关键词
非晶硅薄膜
折射率
吸收系数
光学带隙
暗电导率
a-Si thin film
refractive index
absorption coefficient
optical band gap
dark conductivity
