基于ATLAS新型硅磁敏三极管特性仿真研究

Simulation of the new type silicon magnetic sensitive transistor characteristics on the base of ATLAS

通过分析矩形板状立体结构新型硅磁敏三极管基本结构、工作原理和特性,采用Silvaco的ATLAS软件建立新型硅磁敏三极管仿真结构模型,研究基区宽度、复合基区长度等几何结构参数对新型硅磁敏三极管I-V特性、磁电特性和温度特性的影响。仿真结果表明,新型硅磁敏三极管仿真结构模型具有正反向磁灵敏度、集电极电流具有负温度系数,与新型硅磁敏三极管实验特性比较,分析给出几何结构参数对新型硅磁敏三极管特性的影响。

This paper analyzed the basic structure, the working principle and the characteristics of rectangular plate stereo structure of new type silicon magnetic sensitive transistor, using Silvaco＇s ATLAS software to establish a simulation structure model of new type silicon magnetic sensitive transistor, researching the effect on I-V characteristics, magnetoelectricity characteristics and temperature characteristics which came from the geometry parameters such as the base width, composite base length, etc. , the simulation results showed that the simulation structure model of new type silicon magnetic sensitive transistor had both forward and reverse direction magnetic sensitivity, the collector current had a negative temperature coefficient, compared to the experimental characteristics of new type silicon magnetic sensitive transistor, analysis showed the effect of the geometric structure parameters on characteristics of new type silicon magnetic sensitive transistor.