冷态输送ZrCl_4低压化学气相沉积ZrC涂层的制备

Preparation of ZrC Film by Transporting Solid ZrCl_4 during Low Pressure Chemical Vapor Deposition

采用ZrCl4-CH4-H2-Ar反应体系,冷态输送ZrCl4粉末化学气相沉积(CVD)制备ZrC涂层。采用热力学计算并结合实验结果分析了冷态输送ZrCl4化学气相沉积ZrC涂层的特点,采用X射线衍射仪和扫描电镜分析了涂层的物相组成、表面形貌和组织结构。结果表明:冷态输送ZrCl4粉末大幅度降低了ZrC的化学气相沉积温度,且容易获得大面积、结构均匀的ZrC涂层。涂层表面由直径在20～80nm之间的颗粒组成,为无规则"田状"组织。涂层结构主要为柱状晶,沿(200)面优先生长。分析了这种新型"田状"ZrC涂层组织的形成机理以及ZrC涂层的生长机制。

ZrC film was deposited by chemical vapor deposition（CVD） with ZrCl4-CH4-Ar system,and ZrCl4 was transported in solid.The characters of the ZrC film were analyzed by chemical thermodynamics calculating and experimenting.The composition,surface morphology and microstructure were studied by X-ray diffractometry and scanning electron microscopy.The results show that this way falls down the chemical vapor deposition temperature.And it is easy to get widespread homogeneous ZrC film in structure. The film surface is formed by grains within the size of 20-80nm,and shows anomalous ＂farmland＂ organization.The film structure is mainly for columnar crystal which grows preferentially in the plane（200）. In addition,the formation mechanism of the ＂farmland＂ organization and the growth mechanism of the ZrC film were analyzed.