考虑量子效应的短沟道n-MOSFET表面电势分布数值模型

A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects

提出了一种考虑量子效应的短沟道沟道表面电势数值模型,并在此基础上分析了源漏偏压对表面势分布的影响.计算结果和二维量子力学数值模拟结果很好地吻合.结果表明:源漏偏压会造成线性区的沟道表面势减小,进而导致阈值电压下跌;而在饱和区,源漏偏压的影响更大,会造成表面势明显下降,阈值下跌将会更加严重.

In this paper,a numerical model for the distribution of channel surface potential has been proposed.The influence of the drain to source bias on the distribution of channel surface potential has been studied.Calculation results agree well with 2-D quantum mechanical numerical simulation.The results demonstrate that the voltage drop between drain and source reduces the channel surface potential in linear region and leads to Vth roll-off,whereas the influence will be more serious in saturation region.