超薄栅氧MOS器件传统关态栅泄漏电流研究

Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state

理论分析了MOSFET关态泄漏电流产生的物理机制,深入研究了栅氧化层厚度为1.4nm MOSFET传统关态下边缘直接隧穿栅泄漏现象.结果表明:边缘直接隧穿电流服从指数变化规律;传统关态下边缘直接隧穿对长沟道器件的影响大于短沟道器件;衬底反偏在一定程度上减小边缘直接隧穿泄漏电流.

The physical mechanism of off-state leakage current is analyzed Abstractly.The edge direct-tunneling（EDT） gate leakage current of MOSFET with 1.4 nm gate oxide biased in conventional off-state is studied in depth.The results showed that the change of the EDT current obeys index law,the EDT makes a greater impact on short-channel devices than that on long-channel device in conventional off-state,and the EDT current is reduced to a certain extent with the substrate biased reversely.