新一代CMOS器件栅介质材料研究进展

THE STUDYING PROGRESS ON THE NEXT GENERATION GATE DIELECTRIC MATERIALS FOR CMOS DEVICES

随着微电子技术的飞速发展,按照摩尔定律发展的要求,SiO2的极限厚度已经成为Si基集成电路提高集成度的瓶颈。寻求代替SiO2的其它新一代高k栅介质已成为当今微电子技术发展的必然趋势。文章介绍了几种最有可能成为下一代栅介质的高k材料,并对其研究进展和存在的问题进行了阐述。

With the rapid development of microelectronics, the limited thickness of SiO2 has been the node of evaluating the Si-based integrated circuits by Moore＇s Law. In order to overcome the scaling limitation, a replacement of SiO2 with dielectrics having a higher dielectric constant is unavoidable. Several promising alternatives of gate dielectric material are introduced. The latest development of high-k materials is reviewed, and some problems are also discussed.