坩埚在线圈中位置对大直径SiC单晶温度场影响

Effect of Crucible Position in Inductive Coil on Thermal Distribution of Large Diameter SiC Single Crystal

利用Virtual Reactor模拟软件研究了大直径SiC晶体生长中坩埚在感应线圈内不同位置对坩埚内整体温度场、生长腔以及料源内温度场的影响。分析比较了生长腔内径向温度梯度以及轴向温度梯度的变化规律以及坩埚内部整体温度场的分布规律。以此为依据,优化了坩埚设计,获得了理想的适合大直径SiC单晶生长的温场,并成功生长出高质量的7.62cm SiC单晶。

the effect of the crucible position in the inductive coil on thermal distribution of growth cell and SiC powder using Virtual Reactor simulation software in large diameter SiC single crystal growth was investigated.The changes of the radial and axial temperature difference in growth cell and the laws of thermal distribution in the crucible were studied respectively.In terms of the simulation results,the design of the crucible was optimized and the thermal distribution for growing large diameter SiC single crystal was obtained,finally high quality 7.62 cm SiC single crystal have been grown.