摘要
综合分析了ＡＢＯ３钙钛矿结构陶瓷半导化已有的一些实验结果，总结归纳出晶体结构因素对半导体化影响的一些基本规律。指出这一类型陶瓷在实现ｎ型半导化时由固有的晶体结构所决定的有利及不利因素，而其中有些不利因素的影响,可通过某些工艺措施予以降低。
Some results reported previously on the semiconduction of ceramics with ABO, perovskite structure are synthesized and analyzed,some essential orderliness on the influence of crystal structure factors on the semiconduction are summarized and concluded. The advantageous anddisadvantageous factors resulted from the intrinsic crystal structure for n-type semiconduction areindicated,some technologic means which can decrease the effect of the disadvantageous factors arealso indicated.
出处
《压电与声光》
CSCD
北大核心
1999年第6期478-482,F004,共6页
Piezoelectrics & Acoustooptics
关键词
钙钛矿
陶瓷
半导体
perovskite structure
n-type semiconduction
oxygen vacancy
variable valence andreduction
