摘要
Sheet Rb2HgSnS4 was synthesized solvothermally and characterized by X-ray single crystal diffraction. The compound is comprised of sheets with admantane-like [Hg2Sn2S10]8– units. The crystals belong to the space group C2/c, with the unit cell parameters a=1.1063（2） nm, b=1.1071（2） nm, c=1.5741（3） nm, a=90o, β=100.13（3）o, γ=90o. A reflectance spectroscopy study reveals the nature of the semiconductor with an energy of 2.1 eV for the compound.
Sheet Rb2HgSnS4 was synthesized solvothermally and characterized by X-ray single crystal diffraction. The compound is comprised of sheets with admantane-like [Hg2Sn2S10]8– units. The crystals belong to the space group C2/c, with the unit cell parameters a=1.1063（2） nm, b=1.1071（2） nm, c=1.5741（3） nm, a=90o, β=100.13（3）o, γ=90o. A reflectance spectroscopy study reveals the nature of the semiconductor with an energy of 2.1 eV for the compound.
基金
Supported by the Natural Science Foundations of Inner Mongolia of China(No.20080404MS0212)
the Universities Scientific Research Foundations of Inner Mongolia of China(No.NJZY07034)
