石墨烯/Si晶体管的研究进展

Research Progress of Graphene/Si Transistors

石墨烯具有很多优异的力学、电学和结构特性,可用于制备高速、低功耗的半导体电子器件和集成电路芯片。简要介绍了三种石墨烯/Si的制备方法,即剥离法、外延法、剪切和选择转移印刷法,其中外延生长的石墨烯被认为是最终实现碳集成电路的唯一途径。并给出了采用上述方法制备的石墨烯/Si晶体管的电阻、磁阻、载流子迁移和输运特性以及量子霍尔效应(QHE)等电学特性。发现石墨烯/Si晶体管最高频率达155GHz,在室温下具有异常的量子霍尔效应和分数量子霍尔效应。其电荷载流子浓度在电子和空穴之间连续变化,可高达1013 cm-2,迁移率可达2×105 cm2/(V.s)。

Graphene presents many wonderful mechanics, electric and structure characteristics that can be used to fabricate semiconductor electronic devices and integrated circuit chips with super speed and low power. Three kinds of preparation methods for the graphite/Si transistor are briefly introduced, i.e. the stripped method, epitaxial method and graphene-on-demand by cut- and-choose transfer-printing （DCT）. Among the methods above the epitaxial method is believed to be the only way to achieve the integrated circuits of grapheme. Then the electric properties of the graphite/Si transistors prepared by above methods are viewed, such as the resistance, magresistance, carrier mobility and transport property, and quantum Hall effect. It is found that the highest frequency of graphene/Si transistor is 155 GHz, and at room temperature it is with exceptional quantum Hall effect and fractional quantum Hall effect. Besides that, the charge carrier concentration changes continuously between electrons and holes, and can be as high as 10^13 cm^-2 and the migration rate can be up to 2×10^5cm^2/（V·s）.