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Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing

Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing
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摘要 This paper investigates the effect of a non-uniform gate-finger spacing layout structure on the avalanche breakdown performance of RF CMOS technology. Compared with a standard multi-finger device with uniform gate-finger spacing, a device with non-uniform gate-finger spacing represents an improvement of 8.5% for the drain-source breakdown voltage （BVds） and of 20% for the thermally-related drain conductance. A novel compact model is proposed to accurately predict the variation of BVds with the total area of devices, which is dependent on the different finger spacing sizes. The model is verified and validated by the excellent match between the measured and simulated avalanche breakdown characteristics for a set of uniform and non-uniform gate-finger spacing arranged nMOSFETs. This paper investigates the effect of a non-uniform gate-finger spacing layout structure on the avalanche breakdown performance of RF CMOS technology. Compared with a standard multi-finger device with uniform gate-finger spacing, a device with non-uniform gate-finger spacing represents an improvement of 8.5% for the drain-source breakdown voltage （BVds） and of 20% for the thermally-related drain conductance. A novel compact model is proposed to accurately predict the variation of BVds with the total area of devices, which is dependent on the different finger spacing sizes. The model is verified and validated by the excellent match between the measured and simulated avalanche breakdown characteristics for a set of uniform and non-uniform gate-finger spacing arranged nMOSFETs.
作者 刘军 孙玲玲 Marissa Condon
机构地区 Key Laboratory of RF Circuits and Systems School of Electronic Engineering
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第12期64-67,共4页 半导体学报（英文版）
基金 Project supported by the State Key Development Program for Basic Research of China(No.2010CB327403)
关键词 NON-UNIFORM gate-finger spacing avalanche breakdown RF CMOS non-uniform gate-finger spacing avalanche breakdown RF CMOS
分类号 TN386.1 [电子电信—物理电子学]
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参考文献14

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Journal of Semiconductors
2011年 第12期

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