摘要
Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory （NVM） are investigated. A good performance of the memory cell has been achieved, including a fast program/erase （P/E） speed under low voltages, an excellent data retention （maintaining for 10 years） and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.
Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory （NVM） are investigated. A good performance of the memory cell has been achieved, including a fast program/erase （P/E） speed under low voltages, an excellent data retention （maintaining for 10 years） and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.
基金
Project supported by the State Key Development Program for Basic Research of China(Nos.2010CB934200 2011CBA00602)
the National Natural Science Foundation of China(No.60825403)
the National Key Project(Nos.2009ZX-02302-004,2009ZX-02302-005-1)
the National Hi-Tech Research and Development Program of China(No.2008AA031403)
the Director's Fund of IMECAS
