摘要
In order to increase collection efficiency and eliminate image lag, multi n-type implants were introduced into the process of a pinned-photodiode. For the purpose of improving the collection efficiency, multi n-type implants with different implant energies were proposed, which expanded the vertical collection region. To reduce the image lag, a horizontal gradient doping concentration eliminating the potential barrier was also formed by multi n-type implants. The simulation result shows that the collection efficiency can be improved by about 10% in the long wavelength range and the density of the residual charge is reduced from 2.59 × 10^9 to 2.62 × 10^7 cm^-3.
In order to increase collection efficiency and eliminate image lag, multi n-type implants were introduced into the process of a pinned-photodiode. For the purpose of improving the collection efficiency, multi n-type implants with different implant energies were proposed, which expanded the vertical collection region. To reduce the image lag, a horizontal gradient doping concentration eliminating the potential barrier was also formed by multi n-type implants. The simulation result shows that the collection efficiency can be improved by about 10% in the long wavelength range and the density of the residual charge is reduced from 2.59 × 10^9 to 2.62 × 10^7 cm^-3.
基金
Project supported by the National Natural Science Foundation of China(Nos.61036004,60976030)
