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A novel power amplifier structure for RFID tag applications

A novel power amplifier structure for RFID tag applications
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摘要 A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm^2 in a 0.18μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm^2 in a 0.18μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第12期112-115,共4页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.61072010) the National High Technology Research&Development Program of China(No.2008AA04A 102) the Important National Science&Technology Specific Projects(No.2010ZX03007- 002-03)
关键词 power amplifier CMOS class AB RFID power amplifier CMOS class AB RFID
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参考文献9

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