硅掺杂辉光放电聚合物薄膜的热稳定性研究

Thermal stability of Si-doped glow discharge polymer films

采用等离子体辉光放电聚合技术,在不同四甲基硅烷(TMS)流量条件下制备了硅掺杂辉光放电聚合物(Si-GDP)薄膜,采用傅里叶变换红外光谱、X射线光电子能谱和热重(TG)分析技术分析了不同TMS流量对Si-GDP薄膜结构与热稳定性的影响.结果表明:随着TMS流量在0—0.06cm3/min范围变化,Si-GDP薄膜中Si的原子含量CSi为0—16.62%;含Si红外吸收峰的相对强度随TMS流量的增加而明显增大;Si-GDP薄膜的TG分析显示,温度在300℃时,随TMS流量的增加,Si-GDP薄膜的失重减少,热稳定性增强.

The Si-doped glow discharge polymer （Si-GDP） films are deposited by glow discharge polymerization technology at different tetramethylsilane （TMS） flows.The chemical structure,the composition and the thermal stabilities of Si-GDP films are analyzed by the Fourier transform infrared spectroscopy,X-ray photoelectron spectroscopy and thermal gravimetric analysis.The results show that the Si content increases from 0 to 16.62%,when the flow of TMS changes from 0 to 0.06 cm3/min.The relative content of Si—C,Si—H,Si—O,Si—CH3 increases with TMS flow rate increaseing.As TMS flow increases,the thermal stability of Si-GDP film becomes good.