摘要
利用基于密度泛函理论的第一性原理,对不同浓度Er掺杂Si纳米晶粒的结构稳定性、电子和光学性质进行了研究.结果表明:Si纳米晶粒中Er掺杂浓度越低,结构越稳定;Er掺杂后的Si纳米晶粒引入了杂质能级,导致禁带宽度变窄;掺杂后的Si纳米晶粒在低能区出现了一个较强的吸收峰,随着浓度的降低,吸收峰峰值逐渐减小,甚至消失.这为Si基发光材料的设计提供了理论依据.
The structural stability,the electronic and the optical properties of Er-doped silicon nanoparticles are investigated by first principles based on the density functional theory.The results show that the structure is more stable when the doping concentration of Er atoms is smaller in silicon nanoparticles.The doping of Er atom in silicon nanoparticle introduces the impurity levels which result in the narrowing of band gap.A strong absorption peak occurs in the low-energy region of Er-doped silicon nanoparticles,and the intensity of the absorption peak decreases gradually,even disappears with doping concentration decreasing.The study provides the theoretical basis for the design of silicon-based materials.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第12期503-509,共7页
Acta Physica Sinica
基金
国家自然科学基金(批准号:10774036)
河北省自然科学基金(批准号:E2008000631
E2011201134)
河北省光电材料重点实验室和河北大学自然科学基金资助的课题~~
关键词
Si纳米晶粒
掺杂
电子结构
光学性质
silicon nanoparticles
doping
electronic structure
optical properties