期刊文献+

ZnO缓冲层退火温度对TiO_2∶Eu/ZnO薄膜光致发光性能的影响

Influence of Annealing Temperature of ZnO Buffer Layer on the Photoluminescence Property of TiO_2∶Eu/ZnO Thin Films by Sol-gel Process
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摘要 采用溶胶-凝胶法在普通载玻片上制备出以ZnO为缓冲层、稀土Eu3+掺杂的TiO2薄膜,研究了ZnO缓冲层退火温度对TiO2∶Eu薄膜的光致发光性能以及晶体结构的影响。结果表明,随着ZnO层退火温度的升高,薄膜的PL谱增强,在500℃退火时达到最强;XRD显示,TiO2∶Eu3+/ZnO薄膜中有很强的ZnO(002)衍射峰,但是TiO2的(101)衍射峰却很微弱,且ZnO在500℃退火时TiO2的(101)衍射峰最弱。 A series of TiO2 : Eua+ films with ZnO buffer on glasses were prepared by sol-gel process, and the influence of annealing temperature for the ZnO buffer layer on the photoluminescenee property and the crystal structural of the TiO2 : Eu/ZnO thin films were investigated. The results showed that the PL intensities of the films increased with increasing of the annealing temperature of the ZnO buffer layer, and reached the maximum at 500℃ ; the result of X-ray diffraction revealed that the (002) diffraction peaks of ZnO were very strong, while the(101) diffraction peaks of TiO2 were quite low, and got the lowest at 500℃.
出处 《材料导报》 EI CAS CSCD 北大核心 2011年第22期9-12,共4页 Materials Reports
基金 国家自然科学基金(50872112) 西北工业大学基础研究基金(JC20100236)
关键词 ZnO缓冲层 溶胶-凝胶法 光致发光 氧化钛 EU掺杂 ZnO buffer layer, sol-gel, photolumineseence, TiO2, Eu-doped
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