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Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction

Confined State and Electronic Transport in an Artificial Graphene-Based Tunnel Junction
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摘要 Artificial graphene structures embedded in semiconductors could open novel routes for studies of electron interactions in 1ow-dimensional systems. We propose a way to manipulate the transport properties of massless Dirac fermions in an artificial graphene-based tunnel junction. Velocity-modulation control of electron wave propagation in the different regions can be regarded as velocity barriers. Transmission probability of electron is affected profoundly by this velocity barrier. We find that there is no confinement for Dirac electron as the velocity ratio ζ is less than 1, but when the velocity ratio is larger than 1 the confined state appears in the continuum band. These localized Dirac electrons may lead to the decreasing of transmission probability.
机构地区 School of Physics
出处 《Communications in Theoretical Physics》 SCIE CAS CSCD 2011年第12期1135-1139,共5页 理论物理通讯(英文版)
基金 Supported by the National Natural Science Foundation of China under Grants Nos.10174024 and 10474025
关键词 ballistic transport relativistic wave equations Carbon diamond graphite 电子相互作用 人造石墨 隧道结 国家元首 密闭 基础 运输 速度调制
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