摘要
制绒工艺是晶硅太阳能电池产业化研究的重要方向之一。本文对德国Rena公司的湿法腐蚀制绒设备进行了工艺流程的简要概括,在产业化环境中对硅片表面的化学处理工艺进行了研究。通过研究分析,自制的GP溶液能有效的降低溶液表面张力并改善单晶硅片表面的浸润效果;湿法腐蚀后,硅片表面绒面结构清晰,金字塔形状均匀,底座大小在2～3μm左右;由腐蚀深度变化曲线分析可知,各腐蚀槽腐蚀深度值92%都集中在7.5～8.5之间,接近最优化腐蚀深度,碎片率低于5‰。
he study of texturization process is one of the important directions in silicon solar cell industry. In this paper, the process of Rena＇s wet etching system is summarized, and the chemical treatment technology of surface is investigated in the industrial environment. In conclusion, surface tension of solution is decreased and effect of surface invasion is improved because of GP solution. After etching, texturization structure is observed clearly. The size of pyramid structure is about 2 - 3 μm. According to the analysis of varied curve, the remarkable depth of etching is between 7.5 - 8.5 mostly, and fragmentation rate is lower than 5‰.
出处
《东方电气评论》
2011年第4期68-73,共6页
Dongfang Electric Review
关键词
制绒工艺
腐蚀深度
金字塔结构
texturization process
depth of etching
structure of pyramid
