阳极氧化法制备非晶Ta_2O_5及绝缘性能研究

Insulated performance of amorphous Ta_2O_5 film prepared with the anodic oxidation process

利用阳极氧化法制备Ta2O5绝缘介质薄膜。扫描电子显微镜(SEM)、能谱分析(EDS)和X射线衍射仪(XRD)研究表明Ta2O5绝缘介质薄膜表面平整,致密,呈非晶态。电击穿场强测试系统研究利用Ta-Ta2O5-Al复合薄膜制备FED器件(MIM结构)的绝缘性,表明薄膜具有较高的耐击穿场强,约为2.3MV/cm,分析Ta2O5的导通机理,主要为肖特基效应和F-N效应。

The Ta2O5 isolation medium thin film was prepared with the anodic oxidation process.The morphology and composite of Ta2O5 film were characterized by scanning electron microscope（SEM）,X-ray diffractions（XRD） and pectroscope（EDS）,respectively.The results indicated Ta2O5 film was amorphous and had better surface.The electrical breakdown field intensity test system studied insulated performance of Ta-Ta2O5-Al composite films（MIM structure） in the FED component,indicated that the composite films had higher breakdown field intensity,which was 2.3MV/cm.To analyze Ta-Ta2O5-Al composite films breakover mechanism,The schottky effect,F-N Effect were respectively regarded as the main mechanism.