摘要
研制了一种在Al_2O_3多晶基片上制做YBa_2Cu_3O_（7-δ）超导厚膜的工艺方法。将摩尔分数为20%的211相掺杂样品,在外磁场为0,温度为82K的条件下测量,其临界电流密度达4.2×10~3A/cm^2。
With thick film techniques, YBa2Cu_3O7-δ thick film is fabricated on A12O3 polycrystal substrate. With 20mol% 211 phase doped, the YBa2Cu3O7-δ sample's critical current density has reached 4.2×103A/cm2 at 82K and 0T.
出处
《哈尔滨理工大学学报》
CAS
1999年第6期56-58,共3页
Journal of Harbin University of Science and Technology
基金
黑龙江省自然科学基金
