摘要
通过变温霍尔效应实验获得锑化铟的霍尔系数随温度变化的数据,根据半导体的霍尔系数随温度的变化规律,计算出禁带宽度,并且着重讨论禁带宽度的两种求法,比较了两种方法的计算精度.
In this paper, we obtain data about the Hall voltage of InSb changing with temperature. According to the relationship of the Hall coefficient of semiconductor and temperature, we calculate the band gap by using two methods, and compare the difference between the two methods for calculating the band gap.
出处
《大学物理》
北大核心
2011年第11期32-34,52,共4页
College Physics
关键词
载流子
本征激发
禁带宽度
霍尔系数
carrier
intrinsic excitation
band gap
Hall coefficient
