摘要
探讨了廉价太阳能级硅材料对电池性能可能的影响,据此对激光刻槽埋栅电池的工艺加以优化.在此基础上制作的大面积太阳电池的转换效率达到16.59%.
Solar- grade silicon substrated contain more oxygen, carbon and metal impuritiesthen semiconductor-grade, expedally FZ silicon. On the basis of the knoWledge about theoxygen behavior in various high temperature processes, improved conditions are carried out toenhance cell's performance. The Cell with 16.59% conversiton effidency has for obtained.
出处
《北京师范大学学报(自然科学版)》
CAS
CSCD
北大核心
1999年第4期472-474,共3页
Journal of Beijing Normal University(Natural Science)