摘要
In：ZnO nanoparticles are prepared by the sol-gel process. The ratios of In/（Zn＋In） are 0%, 5%, 8%, 10%, and 15%, respectively. Crystal phase structures and optoelectronic properties of these samples are characterized and the chromaticity coordinates of different samples are also calculated in CIE-XYZ colour system. The results show that preferred growth direction of ZnO changes from （002） plane to （001） plane and interplanar distance becomes shorter. When the doping amount of In is 5%, Zn atoms are completely replaced by In atoms. The resistivities of the samples first decrease, then increase afterwards with the increase of the amount of In. With the increase of In, the ultraviolet emission is redshifted and new peaks occur at 465 nm, 535 nm, and 630 nm. The sample with 10% indium has white-light emission. The band structures of samples with 0% and 12.5% indium are investigated by the first principle method. The mechanism of white emission is discussed from the viewpoint of additional energy levels.
In：ZnO nanoparticles are prepared by the sol-gel process. The ratios of In/（Zn＋In） are 0%, 5%, 8%, 10%, and 15%, respectively. Crystal phase structures and optoelectronic properties of these samples are characterized and the chromaticity coordinates of different samples are also calculated in CIE-XYZ colour system. The results show that preferred growth direction of ZnO changes from （002） plane to （001） plane and interplanar distance becomes shorter. When the doping amount of In is 5%, Zn atoms are completely replaced by In atoms. The resistivities of the samples first decrease, then increase afterwards with the increase of the amount of In. With the increase of In, the ultraviolet emission is redshifted and new peaks occur at 465 nm, 535 nm, and 630 nm. The sample with 10% indium has white-light emission. The band structures of samples with 0% and 12.5% indium are investigated by the first principle method. The mechanism of white emission is discussed from the viewpoint of additional energy levels.
基金
supported by the Natural Science Foundation of Shandong Province of China (Grant No. Y2007G14)
the Science and Technology Development Projects of Shandong Province of China (Grant Nos. 2009GG2003028 and 2010G0020423)
the Doctoral Foundation of University of Jinan,China (Grant No. XBS0845)
the Key Laboratory of Luminescence and Optical Information,Ministry of Education,Beijing Jiaotong University,China (Grant No. 2010L0101)
the Scientific Research Foundation of University of Jinan,China (Grant No. XKY1029)
