一种1kb相变存储芯片的设计

Design of a 1 kb Phase Change Memory Chip

以中科院上海微系统与信息技术研究所自主研发的相变存储器工艺为基础,开发了一款容量为1kb、可应用于射频标签(RFID)的嵌入式相变存储芯片。该芯片以1T1R为基本单元结构,采用箝位读出方式以及电流镜式写驱动电路,成功实现了相变存储器的读写功能。测试结果显示,该芯片可重复擦写次数达到107次,在80℃条件下数据保持力达到10年,圆片(wafer)成品率达到99.9%。

A 1-kb phase change memory chip（PCRAM） was fabricated using phase change memory process developed by SIMIT,which could be used as embedded memory for RFID.The PCRAM cell was based on 1T1R structure.A clamp reading drive and a current mirror writing drive were designed to realize load/store function of PCRAM.Test results showed that the proposed PCRAM chip had an endurance up to 107,and its data retention could be extrapolated to 10 years at 80 ℃.The wafer yield was up to 99.9%.