氧化锌基TFT稳定性研究进展

Progress in Research on Stability of ZnO-Based Thin Film Transistor

总结了氧化锌基TFT稳定性的最新研究进展,分析了栅偏压、栅绝缘层和背沟道影响TFT稳定性,尤其是阈值电压稳定性的主导机制。结果表明,氧化锌基TFT的不稳定性主要取决于陷阱缺陷态对可动载流子的俘获作用,以及新陷阱态的产生。总结了提高氧化锌基TFT稳定性的三种途径:降低栅偏压;提高沟道/栅绝缘层界面质量,降低缺陷态密度;钝化保护背沟道。

Progress in research on stability of ZnO-based TFT in recent years was reviewed.Effects of gate bias voltage,insulator and back channel on stability of ZnO-based TFT were analyzed.Dominant mechanism of threshold voltage shift was discussed in particular,which was believed to be mainly caused by trapping charge and new defect states.As a result of the analysis,three ways were proposed to improve stability of ZnO-based TFT： 1） reducing gate bias voltage,2） improving quality of channel/insulator interface to decrease density of defect states,and 3） protecting back channel with passivated layer.