场发射FED器件MIM结构Ta-Ta_2O_5-Al薄膜的制备及性能

Preparation and Performance of the Ta-Ta_2O_5-Al Composite Films in the MIM Structure's FED Component

利用直流磁控溅射Ta膜和阳极氧化法制备Ta2O5薄膜,能谱分析(EDS)和X射线衍射仪(XRD)研究表明,在H3PO4电解液中添加少量的乙二醇制备的Ta2O5薄膜,呈非晶态,没有β-Ta2O5晶相出现.利用电击穿场强测试系统研究Ta-Ta2O5-Al复合薄膜制备FED器件(MIM结构)的绝缘性,证明采用磁控溅射和阳极氧化法成功制备了漏电流密度低、耐击穿场强高的Ta2O5薄膜.

The direct-current megnetron sputtering and the anodic oxidation process were adopted to prepare the Ta2O5 thin film.In the anodic oxidation process,a soupcon of glycol was appended in H3PO4 electrolyte for the preparation of the Ta2O5 film.The composite of the Ta2O5 thin film was characterized by X-ray diffractions（XRD）and pectroscope（EDS）,respectively.The results indicated the Ta2O5 film was amorphous and there was no β-Ta2O5 srystalline phase.The electrical breakdown field intensity test system was employed to study the insulation performance of the Ta-Ta2O5-Al composite films（MIM structure）in the FED component.The results indicated that the Ta-Ta2O5-Al composite films had higher breakdown field intensity.