基于带隙影响的量子阱红外探测器带宽的研究

Study on the bandwidth of quantum well infrared photo-detector

量子阱红外探测器(QWIP)受到压强、掺杂浓度、温度等多种因素的影响,主要从温度对带隙影响方面进行了研究。以QWIP中的能级公式和能级间的电子跃迁为基础,首先通过GaAs和AlGaAs两种材料的带隙与温度的关系式,得到ΔEg随温度的变化情况;接着利用吸收波长的公式计算出三种跃迁下的吸收波长与温度的关系;最后结合光电流谱以及不同情况下得到的三组吸收波长、波数值,分析了光电流峰位的变化,为解决QWIP的带宽问题提供了一种思路。

Quantum well infrared photo-detector（QWIP） is influenced by many factors such as pressure, doping concentratlon, temperature and so on. This article mainly makes a study on the influence of temperature on band gap. At first,based on the energy level formula and electronic transition between energy levels in QWIP, the change of △Eg with temperature is derived through the relation between band gap of GaAs and A1GaAs and temperature. Then, using the formula of absorption wavelength, the absorption wavelength of the three transitions with temperature is calculated. Finally, with photocurrent spectrum and three group values of absorption wavelength and wave number, the change of photocurrent peak＇s position is analyzed,which provides a solution to the bandwidth problem of QWIP.