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四元并行电容性Frisch栅肖特基CdZnTe探测器 被引量:3

CdZnTe detectors with parallel capacitive Frisch grid
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摘要 由于CdZnTe(CZT)探测器尺寸和能量分辨率受到工艺限制,采用电容性Frisch栅探测器结构,将多个薄的单元探测器并行叠加使其等效为大体积的探测器,用于克服单元小探测器探测效率低的缺点,同时单极电荷的几何结果有效克服了载流子的复合.探测器的电极接触为肖特基接触(In-p/CZT-AuCl3),进一步压缩了权重势,降低了噪声,降低了漏电流,从而得到大体积多元并行探测器的能量分辨率不受单元能量分辨率最差探测器的限制,并且探测效率为单元探测器的2.45~7.31倍. The crystal size and energy resolution of CdZnTe(CZT) detectors are limited by crystal growth technology.In this paper,capacitive Frisch grid detector structure was used to reduce the leakage current and overcome the charge carriers' recombination by the geometric of unipolar charge.The electrode contact of the detector was made of Schottky contact which can further compress the weight of potential and reduce the leakage current noise.A large volume multi-element parallel detector was made by capacitive Frisch grid structure and Schottky contact electrode(In-p/CZT-AuCl3).The energy resolution of multi-element detectors is not limited to the worst energy resolution unit and the detection efficiency is 2.45 ~ 7.31 times more than that of the single unit.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2011年第6期514-517,共4页 Journal of Infrared and Millimeter Waves
基金 国家自然科学基金(50902091) 上海市重点学科建设项目(S30107)
关键词 电容性Frisch栅 肖特基 并行探测器 碲锌镉探测器 capacitive Frisch Schottky contact parallel detector CdZnTe detector
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  • 1Zanarimi M, Chirco P, Dusi W, et al. Radiation damage induced by 2MeV Protons in CdTe and CdZnTe semiconductor detectors [ J ]. Nucl. Instrum. Methods Phys. Res. 2004, 213:315 - 320.
  • 2Wagenaar D J, Chowhury S, Engdahl J C, et al. Plannar image quality comparison between a CdZnTe prototype and a standard NaI ( TI ) gamma camera [ J ]. Nucl. Instrum. Methods Phys. Res. 2003 ,505(1-2) :586 - 598.
  • 3Ge Y, Jie W Q, Li Q, et al. Effects of in doping on the properties of CdZnTe single crystals [ J ]. Journal of Crystal Growth, 2005,283 ( 3-4 ) :431 - 437.
  • 4Bolotnikov A E, Camarda G S, Carini G A, et al. Modeling the effects of Te precipitates on the electron transport in CdZnTe radiation detectors[J]. Nucl. lnstrum. Methods Phys. Res. 2007,579( 1 ) :125 - 129.
  • 5Kim K H, Gul R, Carcelen V, et al. Defect levels and thermomigration of Te precipitates in CdZnTe : Pb [ J ]. J. Crystal Growth,2010,312(6) :781 -784.
  • 6Zhang X W, Zhao Z L, Zhang P J, et al. Comparison of CdZnTe crystals grown by the Bridgman method under Terich and Te-stoichiometric conditions and the annealing effects[J]. J. Crystal Growth,2009,311(2) :286-291.
  • 7Carvalho A , Tagantsev A, Oberg S , et al. Intrinsic detects in CdTe and CdZnTe alloys [ J ]. Physica B: Condensed Matter, 2009,404 ( 23 ) : 5019 - 5021.
  • 8Mont mont G, Argues M, Verger L, et al. A capacitive Frisch grid structure for CdZnTe detectors [ J ]. IEEE Trans. Nucl. Sci, ,2001,4(3):278-281.
  • 9Kim K H, Cho S H, Sun J H, et al. Schottky-type polycrystalline CdZnTe X-ray detectors [ J ]. Current Applied Physics,2009,9(2) :306-310.
  • 10Ghosh B . Electrical contacts for II -VI semiconducting devices[J]. Microelectronic Engineer,2009,86( 11 ) :2197 - 2206.

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