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基于CST与ADS的介质谐振振荡器的设计 被引量:1

Design of DRO Based on CST and ADS
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摘要 分析了介质谐振振荡器的起振和稳频的原理,研究了一种低相位噪声的介质谐振振荡器的设计方法。以X波段为例,利用CST Microwave Studio 2010软件仿真了微带线与介质谐振器耦合的模型,将仿真得到的结果导入S2P文件中。再利用Agilent ADS 2011软件仿真介质谐振振荡器的完整电路,采用S参数仿真和谐波仿真分析等方法设计介质谐振振荡器,结合理论分析,调整和修改实验电路的参数值,使模型达到最好的优化结果。最后通过测试验证仿真结果。采用NEC公司的2SC5508芯片作为放大器,得出微波振荡器的输出频率为10.6 GHz,输出功率为5.19 dBm和较低的相位噪声,其在偏离中心频率10 kHz处小于-121 dBc/Hz。 The theory of the dielectric resonator oscillator (DRO) start-up and stabilization was analyzed. And a method was studied for developing the dielectric resonator oscillator with low phase noise. Taking X-band for example, the coupling models of the micro strip and DR were simulated by using CST Microwave Studio 2010 software, and S2P profile was extracted. Then the model of the DRO circuit was simulated by using Agilent ADS 2011 software. The DRO circuit was designed by using the S- parameters simulation and harmonic simulation methods. Combined with the theory analysis, the circuit parameters were adjusted and modified, the results of the model were optimized. Finally, the simulation results were confirmed through the test. Using the NEC 2SC5508 as the amplifier, the microwave oscillator output frequency is 10.6 GHz, the output power is 5.19 dBm and the phase noise is lower, the phase noise at 10 kHz off carrier frequency is lower than - 121dBc/Hz.
出处 《半导体技术》 CAS CSCD 北大核心 2012年第1期55-58,共4页 Semiconductor Technology
关键词 介质谐振振荡器 相位噪声 本振频率源 谐波仿真 联合仿真 dielectric resonator oscillator (DRO) phase noise frequency source harmonic simulation co-simulation
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