阵列半导体激光器的单元均匀性与器件的质量关系

Dependence of the Junction Voltage Saturation on the Uniformity and Quality of the Laser Diode Bars

本文通过电导数和光导数技术对阵列半导体激光器及单管并联模拟阵列进行了测试,通过对表征半导体激光器质量的h和Q参数的测试,研究了各单元器件均匀性与其组成的阵列器件的质量的关系。导数测试的h和Q参数可以给出阵列器件的均匀性,导数技术可以用来评价阵列半导体激光器的质量。

Some laser diode arrays （LDA）, including several LDA simulating with shunt-wound LDs, were measured with the electrical and optical derivative technique in this article. The parameter h and Q of the laser diode, which could show the quality of the devices, was measured. The effect of the emit units＇ differences of LDA on the characteristics of the whole LDA was also studied. The parameter h and Q of the LDA can make out the uniformity of the device, and the electrical and optical derivative technique could be employed to evaluate the reliability of LDA.