期刊文献+

不同厚度三倍频SiO_2增透膜的设计、制备与改性 被引量:3

Design,Preparation and Modification of Third-Harmonic Silica Antireflective Coatings with Different Thickness
下载PDF
导出
摘要 本文通过光学计算设计了具有不同厚度的三倍频增透膜。以氨水为催化剂、正硅酸乙酯(TEOS)为前驱体,通过溶胶-凝胶(Sol-Gel)技术制得SiO2溶胶;采用浸渍提拉法镀膜得到符合设计要求的三倍频增透膜。研究结果表明,增透膜的耐磨擦性能随着膜层厚度的增大而增大,本文制得的厚度达到200 nm以上的三倍频增透膜耐磨擦性能显著优于传统的1/4波长三倍频增透膜。此外,本文以甲基含氢硅油为膜表面修饰剂,提出一种全新的超快的表面疏水性改性的方法。经该方法处理后,增透膜由亲水膜转变为疏水膜,对水的接触角从23.4°增大至95°,增透膜的耐环境性显著提高。 Third-harmonic antireflective (AR) coatings with different thickness were designed via optical formula in this work. Using tetraethylorthosilicate (TEOS) as precursor and ammonia as catalyst, SiO2 sol was prepared by sol-gel process. The designed AR coatings were obtained by dip-coating process. It is found that the abrasion-resistance of AR coatings increased with film thickness, indicating that the abrasion-resistance of third-harmonic AR coatings prepared in this work is much better than that of the traditional quarter-wave third-harmonic AR coating. In addition, a totally new and super-fast surface modification method was proposed by using methyl hydrogen silicone oil as modifier. The water contact angle of AR coating increased from 23.4° to 95° after the surface modification.
出处 《无机化学学报》 SCIE CAS CSCD 北大核心 2012年第1期119-124,共6页 Chinese Journal of Inorganic Chemistry
基金 四川大学中央高校基本科研业务(No.2010SCU23003)资助项目
关键词 溶胶-凝胶技术 三倍频 增透膜 甲基含氢硅油 耐磨擦性 耐环境性 Sol-Gel process third-harmonic antireflective coating methyl hydrogen silicone oil abrasion-resistance environment-resistance
  • 相关文献

参考文献25

  • 1Thomas I M.Appl.Opt.,1986,25(9):1481-1483.
  • 2Whitman P,Fair J,Aboud R,et al.ICF Quarterly Report,1999,9(2):163-176.
  • 3Thomas I M.SPIE,1994,2114:232-243.
  • 4Haruvy Y,Gilath I,Maniewictz M,et al.SPIE,1997,3110:696-705.
  • 5Floch H G,Belleville P F.J.Sol-Gel Sci.Technol.,1994,2:695-705.
  • 6FUTian(付甜) WUGuang-Ming(吴广明) SHENJun(沈军) etal.Tongji Daxue Xuebao,2004,:276-280.
  • 7Floch H G,Belleville P F.J.Sol-Gel Sci.Technol.,1994,2:293-304.
  • 8Han Z H,Tian J W,Lao J J,et al.J.Coat.Technol.Res.,2004,4:337-341.
  • 9Zhang X X,Cao C R,Xiao B,et al.J.Sol-Gel Sci.Technol.,2010,53:79-84.
  • 10Zhang X X,Ye H P,Xiao B,et al.J.Phys.Chem.C,2010,114:19979-19983.

同被引文献31

引证文献3

二级引证文献14

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部