期刊文献+

外加载荷对镀Pt探针与ZnO纳米棒接触电学特性的影响

Effect of Load on Electrical Characteristics of Contacts Between Pt-coated Tip and ZnO Nanorods
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摘要 利用原子力显微镜研究了镀Pt探针与生长在银基底上的单根ZnO纳米棒接触的电学特性。实验测得的I-V特性曲线呈基本对称的非线性形状,表明镀Pt针尖与ZnO纳米棒顶端形成了良好的肖特基接触。同时,研究发现随着外加载荷的增加,针尖与样品间接触面积增大,使得反向截止电压和正向导通电压均有所升高,而理想因子降低。 The electrical characteristics of Pt-coated tip contact to single ZnO nanorod are studied with atomic force microscopy.The measured I-V curves are nonlinear and near symmetric,which indicates a good Schottky contact between Pt tip and ZnO nanorod.When the load is increased,the contact area between the tip and sample gets large.Therefore,the reverse breakdown voltage and the forward voltage go up,and the ideality factor decreases.
出处 《南京航空航天大学学报》 EI CAS CSCD 北大核心 2011年第6期837-840,共4页 Journal of Nanjing University of Aeronautics & Astronautics
基金 国家自然科学基金(11102075)资助项目 江苏省自然科学基金(BK2011490)资助项目 江苏大学科研启动基金(10JDG036)资助项目
关键词 氧化锌纳米棒 I-V特性 肖特基 原子力显微镜 ZnO nanorod I-V characterics Schottky atomic force microscope
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参考文献18

  • 1Wang Zhonglin. Zinc oxide nanostructures: growth, properties and applications[J].J Phys :Condens Matter, 2004,16(25): R829-R858.
  • 2Wang Xudong, Zhou Jun,Song Jinhui,et al. Piezoelectric field effect transistor and nanoforee sensor based on a single ZnO nanowire [J]. Nano lett, 2006, 6(12): 2768-2772.
  • 3Ravirajan P, Peiro A M, Nazeeruddin M K, et al. Hybrid polymer/zinc oxide photovoltaic devices with vertically oriented ZnO nanorods and an amphiphilic molecular interface layer[J]. J Phys Chem B, 2006, 110(15) :7635-7639.
  • 4Wagh M S, Jain G H, Patil D R, et al. Modified zinc oxide thick film resistors as NH3 gas sensor[-J]. Sensors and Actuators B: Chem, 2006, 115 (1): 128-133.
  • 5Lao Changshi, Liu Jin, Gao Puxian, et al. ZnO nanobelt/nanowire schottky diodes formed by dielectrophoresis alignment across Au electrodes[J]. Nano Lett, 2006, 6(2): 263-266.
  • 6Zhou Jun, Gu Yudong, Hu Youfan, et al. Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and Surface functionalization [J]. Appl Phys Left, 2009, 94 (19): 191103.
  • 7Heo Y W, Tien L C, Norton D P, et al. Pt/ZnO nanowire Schottky diodes [J]. Appl Phys Lett, 2004,85 (13) : 3107.
  • 8Hagglund C, Zhdanov Vladimir P. Charge distribution on and near Schottky nanocontacts[J]. Phys E, 2006, 33(1) :296-302.
  • 9Osvald J. Intersecting behaviour of nanoscale Schot- tky diodes I-V curves [J]. Solid State Commun, 2006, 138(1), 39.
  • 10Smit G D J, Rogge S, Klapwijk T M. Enhanced tunneling across nanometer-scale metal-semiconductor interfaces rJ]. Appl Phys Lett, 2002, 80 (14) : 2568.

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