300V以上硅基新型JBS肖特基二极管的制备

Fabrication of Silicon Based Novel Structure JBS Diode with Breakdown Voltage above 300 V

为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 V以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10 A时,正向压降仅为0.79 V;同时在施加300 V反向电压时,反向漏电流在5μA以下。

To retain the advantages of traditional Schottky diodes, such as high current density under low forward voltage and improve their breakdown voltage to above 300 V, we fabricated silicon-based novel structure JBS diodes. Its Schottky barrier area is a honey comb structure, and its terminal is formed by two floating field limiting rings（FLRs） plus a cutoff ring structure. Its forward voltage-drop is only 0.79 V under 10 A current,while its leakage current is less than 5μA when 300 V reverse voltage is applied.