摘要
报道了一款采用两级拓扑结构的2～4GHz宽带高功率单片微波功率放大器芯片。放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计。经匹配优化后放大器在2～4GHz整个频带内脉冲输出功率大于35W,小信号增益达到22dB,在2.4GHz频点处峰值输出功率达到40W,对应的功率附加效率为35%。功率放大器芯片采用0.25μm GaN HEMT76.2mm圆片工艺制造,芯片尺寸为2.7mm×2.3mm。
A 2-4 GHz broadband GaN power amplifier MMIC with two-stage topology was developed. The amplifier was designed in micro-strip technology and reactance matching network was adopted to reduce insert loss of the output stage and improve the MMIC＇s associated efficiency. The amplifier provides a flat small signal gain of 22 dB and a pulsed saturated output power of 35 W at VDS= 28 V from 2 GHz to 4 GHz frequency range. A peak output power of 40 W with power added efficiency of 35% was achieved at 2.＇4 GHz. The amplifier chip was processed with 76.2 mm, 0. 25/2m GaN HEMT MMIC technology. The size of the chit） was 2.7 mrn ×2.3mm
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第6期532-535,共4页
Research & Progress of SSE
