L波段0.5mm SiC SIT

0.5 mm SiC L-band SIT

作为测试小管芯,所研制的小栅宽(0.5mm)L波段SiC SIT器件,台面和栅凹槽线宽分别为1.0μm和1.5μm,源间距2.5μm,采用凹栅结构、Al注入形成PN结等优化手段,提高了器件的击穿特性和微波特性。0.5mm栅宽SiC SIT器件,输出功率通过负载牵引系统进行测试,在1.2GHz CW、50V工作电压下测量的输出功率密度达到7.55W/cm,功率增益在7.3dB;在1.4GHz CW、50V工作电压下测量的输出功率率密度达到了4.4W/cm,功率增益在5.76dB。

A 0.5 mm gate periphery SiC L-band SIT device with a recessed has been fabricated by using a p-type aluminum implatation to form PN junction on 4 H-SiC wafer, which decreases leakage current and enchances breakdown voltage. The device structure is N-channel with source to source pitch of 2.5μm, source mesa width of 1.0μm and gate trench width of 1.5 μm. Its microwave characteristics have been studied by load-pull system. It exhibited a output power density of 7.55 W/cm with gain of 7.3 dB and 4. 4 W/cm with gain of 5.76 dB under 1.2 GHz and 1.4 GHz CW operation at drain to source voltage of 50 V respectively.