期刊文献+

高压下B_(12)As_2晶体结构及晶格振动的第一性原理研究

First-Pprinciples Study on the Crystalline Structure and Lattice Vibration of B_(12)As_2 Crystal Under High Pressure
原文传递
导出
摘要 利用基于密度泛函理论的第一性原理计算,本文研究了二十面体硼化砷(B12As2)在外部静水压强0~30GPa范围内的晶格结构变化。计算结果表明:二中心B-B键在高压下压缩率最大,硼二十面体基团相对比较稳定,外界压力对其影响较小。利用基于密度泛函微扰理论的计算,本文给出了在0~30GPa范围内B12As2晶体所有12个拉曼活性振动模的频率随外部静水压的变化,并给出了零压附近的压强系数和Grüneisen系数。计算结果表明,低频区有关As原子振动的模和频率为502.7cm-1的Eg模对于压力较为不敏感;高频区有关二中心B-B键振动的模对于压力最为敏感。 In this paper,the crystalline structure of icosahedral boron arsenide(B12As2) is studied under hydrostatic pressure in the range of 0~30 GPa using first-principles calculations based on the density functional theory.The results show that the two-center B-B bonds are mostly compressed under pressure,and the icosahedra are relatively stable,which are least compressed by the external pressure.Using the density functional perturbation theory,frequencies of all the 12 Raman-active vibrational modes in B12As2 crystal are calculated in the pressure range of 0~30 GPa,the pressure coefficients at 0 GPa and the Grüneisen parameters are also given.The results indicate that the modes in the low frequency part that are related to the vibrations of As and the 502.7 cm-1 Eg mode are comparatively insensitive to pressure,and the high frequency modes that are related to the vibrations of the two-center B-B bonds are relatively most sensitive to pressure.
出处 《光散射学报》 北大核心 2011年第4期294-300,共7页 The Journal of Light Scattering
关键词 二十面体硼化砷 第一性原理 高压 晶格振动 B12 As2 First-principles calculation high pressure lattice vibration
  • 相关文献

参考文献24

  • 1Morosin B, Mullendore A W, Emin D, et al. Rhombohedral crystal structure of compounds containing boron-rich icosahedra[J]. AIP Confer- ence Proceedings, 1986, 140(1): 70.
  • 2Bakalova S, Gong Y, Cobet C, etal. Energy band structure and optical response function of icosahe- dral Bn As2: A spectroscopic ellipsometry and first-principles calculational study [ J ]. Phys. Rev. B, 2010, 81(7): 075114.
  • 3Li D. and W. Y. Ching. Electronic structure and optical properties of the B12O2 crystal[J]. Phys. Rev. B, 1996, 54: 1451.
  • 4Morrison I, Bylander D M, Kleinman L. Bands and bonds of B12As2[J]. Phys. Rev. 13, 1992, 45 (4) : 1533.
  • 5Armstrong D, Bolland J, Perkins P. The electron- ic structure of a-B12, B12 P2 and B12 AS2 [J]. Theo- retical Chemistry Accounts: Theory, Computa- tion, and Modeling (Theoretica Chimica Aeta), 1984, 64(6): 501.
  • 6Fan Z, Wang B, Xu X, etal. First-principles cal-culation of vibrational properties of B12 As2 crystal[J]. Physica Status Solidi (B), 2010, 248 (5) : 1242.
  • 7Wu J, Zhu H, Hou D, et al. High Pressure X-ray diffraction study on icosahedral boron arsenide (B12As2)[J]. J. Phys. Chem. Solids, 2011, 72. 144.
  • 8Emin D. Unusual properties of icosahedral boron- rich solids[J]. Journal of Solid State Chemistry, 2006, 179(9): 2791.
  • 9宋婷婷,何捷,孟庆凯,孙鹏.二氧化钒的电子结构及光学性质计算[J].光散射学报,2008,20(2):194-199. 被引量:4
  • 10杜志勇,梁二军,丁佩,王俊平,徐二明.负膨胀材料Zn(CN)_2和Cd(CN)_2的晶格振动分析[J].光散射学报,2008,20(2):145-150. 被引量:8

二级参考文献85

  • 1Iijima S. Helical microtubules of graphitic carbon [J]. Nature, 1991, 354:56-58.
  • 2Bhatnager M, Jayant Baliga B. Comparison of 6H - SiC,3C -SiC,and Si for Power Devices[ J]. Electron Devices, 1993, 40:645 - 655.
  • 3Cho W J, Kosugi R, Senzaki J, et al. Study on electron trapping and interface states of various gate die- lectric materials in 4H - SiC metal - oxide - semi- conductor capacitors [ J ] . Appl.Phys. Lett, 2000, 77:2054 - 2056.
  • 4Sheppard S T, Cooper Jr J A, Melloch M R. Nonequilibrium characteristics of the gate - controlled di- ode in GH - SiC [ J]. Appl. Phys, 1994, 75:3205 - 3207.
  • 5Chopra N G, Luyken R J, Cherry K, et al. Boron nitride nanotubes [ J ]. Science, 1995, 269 : 966 - 967.
  • 6Loiseau A, Willaime F, Demoncy N, et al. Boron nitride nanotubes with reduced numbers of layers synthesized by arc discharge [ J ]. Phys. Rev. Lett, 1996, 76:4737 -4704.
  • 7Goldberg D, Bando Y, Han W, et al. Single - walled B - doped carbon, BrN - doped carbon and BN nanotubos synthesized from single -wailed ear- bon nanotubes through a substitution reaction [ J ]. Chem. Phys. Lett, 1999, 308:337 - 342.
  • 8Nicolas Keller, Cuong Pham - Huu, Gabrielle Ehret, et al. Synthesis and eharacterisation of medium surface area silicon carbide nanotubes [ J ]. Carbon, 2003, 41:2131 -2139.
  • 9Mavrandonakis A, Froudakis G, Schnel M. From pure carbon to silicon - carbon nanotubes : An ab - initio Study[ J ]. Nano Lett, 2003, 3 : 1481 - 1484.
  • 10Menon M, Richter E, Mavrandonakis A, et al. Structure and stability of SiC nanotubes [ J ] . Phys. Rev. B, 2004, 69:115322.

共引文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部