摘要
用磁控反应溅射法制备了ＺｎＯ：Ａｌ（简称ＺＡＯ）薄膜，研究了薄膜方块电阻空间分布的均匀性及微观形貌、并对ＺｎＯ：Ａｌ薄膜表面各元素的化学状态和深度分布进行了 ＸＰＳ和 ＡＥＳ分析。
ZnO: Al(ZAO) films were successfully prepared by dc magnetron reactive sputtering Al/Zn(2.0%) alloy target. The dependences of the spatial distribution of resistivity and the microstructure of ZAO films on temperature were reported. The chemical state and depth profile of Zn, Al and O in ZAO films also were studied by XPS and AES. At the same time, the electrical and optical properties of the films were measured.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第1期72-76,共5页
Acta Metallurgica Sinica
基金
沈阳市科技攻关项目资助
