期刊文献+

径向间距对锑化铟磁阻式接近开关性能的影响

Properties of InSb Magneto-resistive Proximity Switch Influenced by Radial-distance
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摘要 设计了基于锑化铟磁敏传感器的接近开关和信号处理电路,并对不同径向间距下接近开关性能进行了研究,分别分析了动作距离、复位距离以及差程与径向间距的关系。实验结果表明:径向间距为3~7 mm时,接近开关的动态性能良好,径向间距为4 mm时,接近开关性能最佳,动作距离高达8.14 mm,回差距离小于0.05 mm,重复定位精度小于0.04 mm. A proximity switch based on InSb magnetic sensor and its signal processing circuit were designed.The properties of the proximity switch of different radial-distances were discussed.Relations between radial-distance and action-distance,radial-distance and replacement-distance,radial-distance and path-difference were analyzed respectively.Experiment results show the proximity switch has favorable dynamic properties when the range of radial-distances is from 4 mm to 7mm.The performance of proximity switch is the best when the radial-distance is 4 mm.Its action-distance can reach 8.14 mm,the hysteresis-distance and the repeating location accuracy are smaller than 0.05 mm and 0.04 mm respectively.
作者 秦玉伟
出处 《仪表技术与传感器》 CSCD 北大核心 2011年第12期1-2,17,共3页 Instrument Technique and Sensor
关键词 接近开关 锑化铟 磁敏电阻 传感器 proximity switch indium-antimonide(InSb) magneto-resistance(MR) sensor
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