Mn掺杂PBST薄膜的溶胶-凝胶工艺制备及介电调谐性能

Dielectric and Tunable Properties of Mn-doped PBST Thin Films Fabricated by Sol-Gel Method

采用溶胶-凝胶工艺在Pt/Ti/SiO2/Si衬底上制备了Mn掺杂的钛酸锶铅钡PBST铁电薄膜.探讨了掺杂后PBST薄膜的微观结构及其铁介电性能.实验结果表明:随着Mn的掺杂量的增加,PBST薄膜的晶化质量变好,介电常数、介电损耗和调谐量均有减小的趋势,其优值因子有显著的提高.在测定频率为1MHz下,掺杂后的PBST薄膜介电常数和介电损耗呈下降趋势,薄膜的介电常数从未掺杂的1 250降低至掺杂后的610,同时介电损耗由0.095减小到0.033,当Mn为J4mol%时,有最小的介电损耗0.033,虽然调谐量不是最高的,但有最大的优值因子(FOM),其微波介电综合性能有所改善.

The Mn-doped（Pb, Ba）SrTiO3 thin films have been fabricated on Pt/Ti/SiO2/Si substrate using the sol-gel method. The structural and surface morphology, dielectric and loss properties of undoped and Mndoped PBST thin films have been studied in detail. The experimental results show that： with the increasing content of Mn doped, the grains crystallize better; and the dielectric constant, loss and tunability of PBST thin films all decrease; while the FOM of them increases significantly. At the frequency of 1MHz, the dielectric constant and dielectric loss reduced with the increase of Mn doped. Compared to the undoped PBST thin films, the dielectric constant of the doped PBST thin films reduces from 1 250 to 610; while dielectric loss decreases from 0.095 to 0. 033. When the content of Mn-doped is 4mol%, it has the lowest dielectric loss of 0. 033. Although it not has the largest tunability, but factor of merit （FOM） is the highest.