MOCVD片式红外辐射系统调节曲线的仿真与分析

Simulation and Analysis of Temperature Modulate Curve in MOCVD with the Chipped Infrared Heating System

以片式红外加热的MOCVD反应室为研究对象,应用二位数学模型进行了有限元分析和计算,具体研究了加热器调节的依据——调节曲线的峰值变化情况。通过计算表明,片式加热器加热系统在石墨盘上的调节曲线峰值变化与加热器的加热功率、水平位置和大小有很密切的关系,文中解释了峰值移动的内在原因。得出设计加热器一些原则:加热器越多调节越灵活;外圈加热器最大加热功率要大于内圈加热器;最外圈加热器宜小。研究结果对MOCVD反应室加热系统设计以及在实际生产中的加热条件优化提供了参考。

The change of the peak point of the heating modulate curve, which is based on the modulation of the temperature, in the 2D numerical modeling for the MOCVD reactor is studied by the finite element method with the chipped infrared heating system as a research subject. According to calculation, the change of the modulate curve peak point has a close relationship to the material thermal properties of the Susceptor, the heating power, the geo- metric shapes and position of the heater in the chipped infrared heating system. The internal causes of peak shift are explained. In addition, three principles of designing the heating system are established： The larger the number of heaters is, the more flexible the system modulation is; the biggest power of the outer heater should be greater than the inner heater; the size of outermost heater should be small. The results are beneficial to the design of the MOCVD heating system and the optimization of the heating conditions.