纳电子学的发展

Development of Nanoelectronics

进入21世纪,2004年集成电路的特征尺寸已进入90 nm节点,标志着微电子进入一个新的纪元,即进入了纳电子时代。介绍和总结了纳电子的新进展,包括纳电子的两条发展技术路线:其一是继续按自上而下的方法,以CMOS技术为基础,不断改变栅结构,改变沟道材料,增强控制电子的能力;其二是自下而上的新思路,采用新的器件结构,向自组装发展。此外,还介绍了"后CMOS"器件的工作原理、当前的实验以及和MOSFET相关的性能和面临的挑战。并预计了纳电子未来发展的趋势。

In the 21st century, the feature scaling of the integrated circuit has entered the 90 nm node in 2004, marked the microelectronics into a new era, i. e. the nanoelectronic age. Progresses in the nanoelectronics are introduced and summarized, including two development technical routes of nanoelectronics. The first one is to continue the top-down method, and constantly change the gate structure and channel material, and strengthen the control ability for electron in the channel with CMOS technology. The second is the new idea from bottom to top, with the new device structure, and follow the new development method by self-assembly. Besides that, the ＂beyond CMOS＂ new devices are introduced, including the working principle, current experiment, the performance relative to the MOSFET and fundamental challenges. Furthermore, the future development trends of nanoelectronic is prospected.