摘要
开展了应用于微机电系统(MEMS)封装的硅通孔(TSV)工艺研究,分析了典型TSV的工艺,使用Bosch工艺干法刻蚀形成通孔,气体SF6和气体C4F8的流量分别为450和190 cm3/min,一个刻蚀周期内的刻蚀和保护时长分别为8和3 s;热氧化形成绝缘层;溅射50 nm Ti黏附阻挡层和1μm Cu种子层;使用硫酸铜和甲基磺酸铜体系电镀液电镀填充通孔,比较了双面电镀和自下而上电镀工艺;最终获得了硅片厚度370μm、通孔直径60μm TSV加工工艺。测试结果证明:样品TSV无孔隙;其TSV电阻值小于0.01Ω;样品气密性良好。
The through silicon via （TSV） process used for the micro-electro-mechanical system （MEMS） packaging was researched. The typical TSV process was analyzed and the via hole was formed by dry etching of Bosch process. The flows of SF6 and C4F8 are 450 and 190 cm3/min, and the etching time and protection time are 8 and 3 s during one cycle, respectively. The insulation layer was deposited through the thermal oxidation process, the 50 nm Ti adhesive barrier layer and 1 μm Cu seed layer were sputtered, the via hole was filled through the plating process with the solution of copper sulfate system and methyl sulfonic acid copper system. The two-side plating process and bottom-to-up plating process was compared. Finally, the TSV process for fabri- cating the wafer with 60 μm diameter and 370 μm thick was obtained. The test results show that the TSV samples have no void, the resistance of the TSV is lower than 0. 01 Ω and the samples are hermetic.
出处
《微纳电子技术》
CAS
北大核心
2012年第1期62-67,共6页
Micronanoelectronic Technology
基金
国家高技术研究发展计划(863计划)资助项目(2008AA04Z307)
