锑掺杂量对ATO薄膜结构及光、电性能的影响

Effects of Sb doping amount on structure and transmission,electric property of ATO films

以四氯化锡和三氯化锑为主要原料,采用溶胶-凝胶法制备了不同锑掺杂量的纳米锑掺杂二氧化锡(ATO)薄膜。分别利用XRD、FESEM、紫外可见分光光度计和四探针电阻仪对晶体结构、薄膜形貌、光透过率和薄膜方块电阻进行表征,考察锑掺杂量对ATO薄膜晶体结构、晶粒尺寸、光透过率和导电性能的影响。结果表明:所制备的ATO薄膜为(110)面择优取向的四方相锡石结构,晶粒尺寸小于26 nm,当锑掺杂量为10%(物质的量分数)时,ATO薄膜具有最小的方块电阻(60.1Ω/□),可见光透过率大于85%。

Using sol - gel method and with SnCl4 and SbCl3 as raw materials, antimony doped tin oxide （ ATO ） films with different Sb doping amounts were synthesized. Microstructure, film morphology, transmission, and sheet resistance were characterized by XRD ,FESEM, UV- visible spectroscopy, and four-probe resistivity/square resistance tester, and the effects of Sb doping amounts on crystalline microstructure, crystal size, transmission, and conductivity properties of the ATO films were investigated systematically. Results showed that the prepared ATO films had tetragonal cassiterite structure and the preferred orientation was observed as （110） plane, the average crystal size was less than 26 nm, and its sheet resistance was obtained to be the lowest 60.1Ω/□ when the Sb content was 10% （ molar fraction） ,and the transmission was above 85% in the visible light range.