摘要
为了提高功率MOSFET的开关速度,从功率MOSFET的开关机理加以分析,通过用仿真与电路实验相结合的方法,研究出了功率MOSFET栅极的"过"驱动技术,大大加快了功率MOSFET的开关速度。
In order to improve the switching velocity of the power MOSFET, the MOSFET grid overdriving technology is studied by emulation and circuit experiment based on analysis of the switch basic principle for power MOSFET. The switching velocity of the power MOSFET was improved by the research of the overdriving technology.
出处
《现代电子技术》
2012年第2期121-123,共3页
Modern Electronics Technique
