基于IGBT光伏发电逆变电路的设计

Design of IGBT-based inverter circuit for photovoltaic power generation

为满足高压大容量逆变系统的要求,设计采用绝缘栅双极晶体管IGBT组成逆变电路的光伏发电系统。通过对太阳能光伏发电原理的简单了解,比较场效应管MOSFET和绝缘栅双极晶体管IGBT构成的逆变电路,针对IGBT构成的逆变电路中的重要环节分别提出改进方案来优化电路设计。最终既满足对高压大容量系统要求,又可以提高整个系统工作效率,使得整个系统达到最优状态。

To meet the requirements of high voltage large-capacity inverter systems, a photovoltaic power generation system with an inverter circuit composed of the insulated gate bipolar transistor （IGBT） was designed. According to the principle of solar photovoltaic power generation, a scheme to improve and optimize the circuit design is put forward on the basis of comparing MOSFET with the inverter circuit composed of IGBT, It not only meets the requirements of high voltage large-capacity system, but also improves the efficiency of the whole system and makes the whole system optimal.